? 2008 ixys corporation, all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 100 a v ge = 0v t j = 125 c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 4.2 v t j = 125 c 2.6 v features z international standard packages: jedec to-247ad z igbt and anti-parallel fred in one package z mos gate turn-on - drive simplicity applications z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies ds99996(06/08) IXGH50N120C3 preliminary technical information v ces = 1200v i c110 = 50a v ce(sat) 4.2v t fi(typ) = 64ns genx3 tm 1200v igbt high speed pt igbts for 20 - 50 khz switching to-247 (ixgh) g c e tab symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50 a i cm t c = 25 c, 1ms 250 a i a t c = 25 c 40 a e as t c = 25 c 750 mj ssoa v ge = 15v, t j = 125 c, r g = 3 i cm = 100 a (rbsoa) clamped inductive load @v ce 1200v p c t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13 / 10 nm/lb.in. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 6 g
ixys reserves the right to change limits, test conditions, and dimensions. IXGH50N120C3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 24 40 s c ies 4190 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 330 pf c res 130 pf q g 196 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 24 nc q gc 84 nc t d(on) 20 ns t ri 34 ns e on 2.2 mj t d(off) 123 ns t fi 64 ns e off 0.63 1.2 mj t d(on) 20 ns t ri 35 ns e on 4.3 mj t d(off) 170 ns t fi 315 ns e off 2.1 mj r thjc 0.27 c/w r thck 0.21 c/w inductive load, t j = 125 c i c = 40a, v ge = 15v v ce = 600v, r g = 2 note 1 inductive load, t j = 25 c i c = 40a, v ge = 15v v ce = 600v, r g = 2 note 1 notes: 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2008 ixys corporation, all rights reserved IXGH50N120C3 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 0 3 6 9 12 15 18 21 24 27 30 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v 5v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 25a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 56789101112131415 v ge - volts v ce - volts i c = 100 a t j = 25oc 50 a 25 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 4.04.55.05.56.06.57.07.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH50N120C3 ixys ref: g_50n120c3(7n)6-03-08 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 200 400 600 800 1000 1200 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v ge - volts v ce = 600v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved IXGH50N120C3 fig. 12. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 23456789101112131415 r g - ohms e off - millijoules 3 4 5 6 7 8 9 10 11 12 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 17. inductive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 110 120 130 140 150 160 170 180 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f - nanoseconds 100 150 200 250 300 350 400 450 500 550 600 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 9 10 11 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 450 20 30 40 50 60 70 80 i c - amperes t f - nanoseconds 80 100 120 140 160 180 200 220 240 260 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH50N120C3 ixys ref: g_50n120c3(7n)6-03-08 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 110 20 30 40 50 60 70 80 i c - amperes t r - nanoseconds 16 17 18 19 20 21 22 23 24 25 26 27 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 19 20 21 22 23 24 25 26 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 55 60 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
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